On the determination of surface-state density from MOS C-V measurements

On the determination of surface-state density from MOS C-V measurements

Methods of experimentally determining the surface-state density from MOS C-V measurements have been developed under the assumption that the density is approximately constant over the range of several kT about the Fermi level at the surface. This note illustrates that the surface-state density can ac...

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Veröffentlicht in:IEEE transactions on electron devices 1976-10, Vol.23 (10), p.1191-1192
1. Verfasser: Heald, D.L.
Format: Artikel
Sprache:eng
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Zusammenfassung:Methods of experimentally determining the surface-state density from MOS C-V measurements have been developed under the assumption that the density is approximately constant over the range of several kT about the Fermi level at the surface. This note illustrates that the surface-state density can actually vary quite rapidly in that range (as a result of a large first derivative) with no loss of accuracy.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1976.18572