Analytical gate current model for n-channel heterostructure field effect transistors

A simple analytical gate current model for n-channel heterostructure field effect transistors (HFETs) has been developed. Our model is based on the self-consistent approximation to the solution of Schrodinger and Poisson's equations, and the theory of thermionic-field emission. Good agreement between the experimental data and the model results is obtained over the entire range of gate voltages, from below to above threshold, and over a wide range of temperature from 198 to 450 K. Only four parameters are used to fit the experimental data with two of these parameters obtained from the experimental results. This model is suitable for implementation in sophisticated CAD tools such as SPICE.