On the threshold Voltage of symmetrical DG MOS capacitor with intrinsic silicon body
An analytical expression explicitly relating the potential and the electric field at the oxide-semiconductor interface of a symmetrical double-gate oxide-intrinsic semiconductor-oxide system is derived. The expression is continuously applicable to all regimes of operation. The "turn-on" be...
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| Veröffentlicht in: | IEEE transactions on electron devices 2004-10, Vol.51 (10), p.1600-1604 |
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| container_end_page | 1604 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 51 |
| creator | Wong, M. Shi, X. |
| description | An analytical expression explicitly relating the potential and the electric field at the oxide-semiconductor interface of a symmetrical double-gate oxide-intrinsic semiconductor-oxide system is derived. The expression is continuously applicable to all regimes of operation. The "turn-on" behavior of the system is studied and an "extrapolated" threshold voltage is uniquely defined. Opposite to the behavior of a conventional bulk metal-oxide-semiconductor capacitor realized on a doped substrate, this threshold voltage is shown to decrease with increasing oxide thickness. |
| doi_str_mv | 10.1109/TED.2004.834901 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_28982938</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1337170</ieee_id><sourcerecordid>2428101951</sourcerecordid><originalsourceid>FETCH-LOGICAL-c410t-b5c2d8ec88301d76c064e21613c0ffa5d4ef4ef5c94539e5bba51ea33f635493</originalsourceid><addsrcrecordid>eNqFkU1rGzEQhkVpIW6acw69iELa0zqa1cdKx-CkaSHBh5hchaydrRXWK0daE_zvq8WBQA4tjBjEPDPDvC8h58DmAMxcrm6u5zVjYq65MAw-kBlI2VRGCfWRzBgDXRmu-Qn5nPNT-Soh6hlZLQc6brC8hHkT-5Y-xn50f5DGjubDdotjCt719PqW3i8fqHc758MYE30J44aGoZSHHDzNoQ8-DnQd28MX8qlzfcaz13xKVj9vVotf1d3y9vfi6q7yAthYraWvW41ea86gbZRnSmANCrhnXedkK7ArIb0RkhuU67WTgI7zTnEpDD8lP45jdyk-7zGPdhuyx753A8Z9tkUFpUE1spDf_0nW2uh6Uuf_oJCNkKqA396BT3GfhnKt1bpcZ7ic1l4eIZ9izgk7u0th69LBArOTabaYZifT7NG00nHxOtblonqX3OBDfmtT0ACIaf3XIxcQ8a3MeQMN438BoraeLw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>884109355</pqid></control><display><type>article</type><title>On the threshold Voltage of symmetrical DG MOS capacitor with intrinsic silicon body</title><source>IEEE Electronic Library (IEL)</source><creator>Wong, M. ; Shi, X.</creator><creatorcontrib>Wong, M. ; Shi, X.</creatorcontrib><description>An analytical expression explicitly relating the potential and the electric field at the oxide-semiconductor interface of a symmetrical double-gate oxide-intrinsic semiconductor-oxide system is derived. The expression is continuously applicable to all regimes of operation. The "turn-on" behavior of the system is studied and an "extrapolated" threshold voltage is uniquely defined. Opposite to the behavior of a conventional bulk metal-oxide-semiconductor capacitor realized on a doped substrate, this threshold voltage is shown to decrease with increasing oxide thickness.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2004.834901</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Capacitors ; Dielectric, amorphous and glass solid devices ; Electric potential ; Electronics ; Exact sciences and technology ; Exact solutions ; Extrapolation ; Mathematical analysis ; Metal oxide semiconductors ; MOS capacitors ; Oxides ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon ; Threshold voltage</subject><ispartof>IEEE transactions on electron devices, 2004-10, Vol.51 (10), p.1600-1604</ispartof><rights>2004 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c410t-b5c2d8ec88301d76c064e21613c0ffa5d4ef4ef5c94539e5bba51ea33f635493</citedby><cites>FETCH-LOGICAL-c410t-b5c2d8ec88301d76c064e21613c0ffa5d4ef4ef5c94539e5bba51ea33f635493</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1337170$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,778,782,794,27907,27908,54741</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1337170$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16171146$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Wong, M.</creatorcontrib><creatorcontrib>Shi, X.</creatorcontrib><title>On the threshold Voltage of symmetrical DG MOS capacitor with intrinsic silicon body</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>An analytical expression explicitly relating the potential and the electric field at the oxide-semiconductor interface of a symmetrical double-gate oxide-intrinsic semiconductor-oxide system is derived. The expression is continuously applicable to all regimes of operation. The "turn-on" behavior of the system is studied and an "extrapolated" threshold voltage is uniquely defined. Opposite to the behavior of a conventional bulk metal-oxide-semiconductor capacitor realized on a doped substrate, this threshold voltage is shown to decrease with increasing oxide thickness.</description><subject>Applied sciences</subject><subject>Capacitors</subject><subject>Dielectric, amorphous and glass solid devices</subject><subject>Electric potential</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Exact solutions</subject><subject>Extrapolation</subject><subject>Mathematical analysis</subject><subject>Metal oxide semiconductors</subject><subject>MOS capacitors</subject><subject>Oxides</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Threshold voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkU1rGzEQhkVpIW6acw69iELa0zqa1cdKx-CkaSHBh5hchaydrRXWK0daE_zvq8WBQA4tjBjEPDPDvC8h58DmAMxcrm6u5zVjYq65MAw-kBlI2VRGCfWRzBgDXRmu-Qn5nPNT-Soh6hlZLQc6brC8hHkT-5Y-xn50f5DGjubDdotjCt719PqW3i8fqHc758MYE30J44aGoZSHHDzNoQ8-DnQd28MX8qlzfcaz13xKVj9vVotf1d3y9vfi6q7yAthYraWvW41ea86gbZRnSmANCrhnXedkK7ArIb0RkhuU67WTgI7zTnEpDD8lP45jdyk-7zGPdhuyx753A8Z9tkUFpUE1spDf_0nW2uh6Uuf_oJCNkKqA396BT3GfhnKt1bpcZ7ic1l4eIZ9izgk7u0th69LBArOTabaYZifT7NG00nHxOtblonqX3OBDfmtT0ACIaf3XIxcQ8a3MeQMN438BoraeLw</recordid><startdate>20041001</startdate><enddate>20041001</enddate><creator>Wong, M.</creator><creator>Shi, X.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20041001</creationdate><title>On the threshold Voltage of symmetrical DG MOS capacitor with intrinsic silicon body</title><author>Wong, M. ; Shi, X.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c410t-b5c2d8ec88301d76c064e21613c0ffa5d4ef4ef5c94539e5bba51ea33f635493</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Applied sciences</topic><topic>Capacitors</topic><topic>Dielectric, amorphous and glass solid devices</topic><topic>Electric potential</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Exact solutions</topic><topic>Extrapolation</topic><topic>Mathematical analysis</topic><topic>Metal oxide semiconductors</topic><topic>MOS capacitors</topic><topic>Oxides</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>Threshold voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wong, M.</creatorcontrib><creatorcontrib>Shi, X.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wong, M.</au><au>Shi, X.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the threshold Voltage of symmetrical DG MOS capacitor with intrinsic silicon body</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2004-10-01</date><risdate>2004</risdate><volume>51</volume><issue>10</issue><spage>1600</spage><epage>1604</epage><pages>1600-1604</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>An analytical expression explicitly relating the potential and the electric field at the oxide-semiconductor interface of a symmetrical double-gate oxide-intrinsic semiconductor-oxide system is derived. The expression is continuously applicable to all regimes of operation. The "turn-on" behavior of the system is studied and an "extrapolated" threshold voltage is uniquely defined. Opposite to the behavior of a conventional bulk metal-oxide-semiconductor capacitor realized on a doped substrate, this threshold voltage is shown to decrease with increasing oxide thickness.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2004.834901</doi><tpages>5</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 2004-10, Vol.51 (10), p.1600-1604 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Capacitors Dielectric, amorphous and glass solid devices Electric potential Electronics Exact sciences and technology Exact solutions Extrapolation Mathematical analysis Metal oxide semiconductors MOS capacitors Oxides Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Threshold voltage |
| title | On the threshold Voltage of symmetrical DG MOS capacitor with intrinsic silicon body |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T09%3A10%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=On%20the%20threshold%20Voltage%20of%20symmetrical%20DG%20MOS%20capacitor%20with%20intrinsic%20silicon%20body&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Wong,%20M.&rft.date=2004-10-01&rft.volume=51&rft.issue=10&rft.spage=1600&rft.epage=1604&rft.pages=1600-1604&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2004.834901&rft_dat=%3Cproquest_RIE%3E2428101951%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=884109355&rft_id=info:pmid/&rft_ieee_id=1337170&rfr_iscdi=true |