On the threshold Voltage of symmetrical DG MOS capacitor with intrinsic silicon body

An analytical expression explicitly relating the potential and the electric field at the oxide-semiconductor interface of a symmetrical double-gate oxide-intrinsic semiconductor-oxide system is derived. The expression is continuously applicable to all regimes of operation. The "turn-on" be...

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Veröffentlicht in:	IEEE transactions on electron devices 2004-10, Vol.51 (10), p.1600-1604
Hauptverfasser:	Wong, M., Shi, X.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitors Dielectric, amorphous and glass solid devices Electric potential Electronics Exact sciences and technology Exact solutions Extrapolation Mathematical analysis Metal oxide semiconductors MOS capacitors Oxides Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Threshold voltage
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Beschreibung
Zusammenfassung:	An analytical expression explicitly relating the potential and the electric field at the oxide-semiconductor interface of a symmetrical double-gate oxide-intrinsic semiconductor-oxide system is derived. The expression is continuously applicable to all regimes of operation. The "turn-on" behavior of the system is studied and an "extrapolated" threshold voltage is uniquely defined. Opposite to the behavior of a conventional bulk metal-oxide-semiconductor capacitor realized on a doped substrate, this threshold voltage is shown to decrease with increasing oxide thickness.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2004.834901