One transistor ferroelectric memory with Pt/Pb(5)Ge(3)O(11)/Ir/poly-Si/SiO(2)/Si gate-stack

One transistor ferroelectric memory with Pt/Pb(5)Ge(3)O(11)/Ir/poly-Si/SiO(2)/Si gate-stack

One transistor ferroelectric nonvolatile memory with gate stack of Pt/Pb(5)Ge(3)O(11)/lr/poly-Si/SiO(2 )/Si was successfully fabricated. This device features a saturated memory window of 3 V at a programming voltage of higher than 3 V from C-V and I-V measurements. The memory window decays rapidly w...

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Veröffentlicht in:IEEE electron device letters 2002-06, Vol.23 (6), p.339-341
Hauptverfasser: Li, Tingkai, Hsu, Sheng Teng, Ulrich, B D, Stecker, L, Evans, D R, Lee, J J
Format: Artikel
Sprache:eng
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Zusammenfassung:One transistor ferroelectric nonvolatile memory with gate stack of Pt/Pb(5)Ge(3)O(11)/lr/poly-Si/SiO(2 )/Si was successfully fabricated. This device features a saturated memory window of 3 V at a programming voltage of higher than 3 V from C-V and I-V measurements. The memory window decays rapidly within 10 seconds after programming, but remains stable at 1 V for up to 100 h. The "on" and "off" state currents are greater than 10 muA/mum and less 0.01 pA/mum, respectively, at a drain voltage of 0.1 V
ISSN:0741-3106
DOI:10.1109/LED.2002.1004228