Integrated RF components in a SiGe bipolar technology
Several components for the design of monolithic RF transceivers on silicon substrates are presented and discussed. They are integrated in a manufacturable analog SiGe bipolar technology without any significant process alterations. Spiral inductors have inductance values in the range of /spl sim/0.15...
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Veröffentlicht in: | IEEE journal of solid-state circuits 1997-09, Vol.32 (9), p.1440-1445, Article 1440 |
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Sprache: | eng |
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Zusammenfassung: | Several components for the design of monolithic RF transceivers on silicon substrates are presented and discussed. They are integrated in a manufacturable analog SiGe bipolar technology without any significant process alterations. Spiral inductors have inductance values in the range of /spl sim/0.15-80 nH with typical maximum quality-factors (Q/sub max/) of 3-20. The Q/sub max/'s are highest if the doping concentration under the inductors is kept minimum. It is shown that the inductor area is an important parameter toward optimization of Q/sub max/ at a given frequency. The inductors can be represented in circuit design by a simple lumped-element model. MOS capacitors have Q's of /spl sim/20/f (GHz)/C(pF), metal-insulator-metal (MIM) capacitors reach Q's of /spl sim/80/f (GHz)/C(pF), and varactors with a 40% tuning range have Q's of /spl sim/70/f (GHz)/C(pF). Those devices can he modeled by using lumped elements as well. The accuracy of the modeling is verified by comparing the simulated and the measured high-frequency characteristics of a fully integrated, passive-element bandpass filter. |
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ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/4.628759 |