Impact on structural, optical and electrical properties of CuCl by incorporation of Zn for n-type doping

γ-CuCl is a wide-band gap ( E g = 3.395 eV at 4 K), direct band gap, semiconductor material with a cubic zincblende lattice structure. A very large exciton binding energy (190 meV), assures efficient exciton-based emission at room temperature. Its lattice constant, a CuCl = 0.541 nm means that the l...

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Veröffentlicht in:	Journal of crystal growth 2006-01, Vol.287 (1), p.139-144
Hauptverfasser:	O’Reilly, L., Mitra, A., Natarajan, Gomathi, Lucas, O.F., McNally, P.J., Daniels, S., Cameron, D.C., Bradley, A.L., Reader, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Doping A1. X-ray diffraction B1. CuCl B2. Wide-band gap semiconductor Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Conductivity of specific materials Defects and impurities: doping, implantation, distribution, concentration, etc Electronic transport in condensed matter Exact sciences and technology Other crystalline inorganic semiconductors Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Zusammenfassung:	γ-CuCl is a wide-band gap ( E g = 3.395 eV at 4 K), direct band gap, semiconductor material with a cubic zincblende lattice structure. A very large exciton binding energy (190 meV), assures efficient exciton-based emission at room temperature. Its lattice constant, a CuCl = 0.541 nm means that the lattice mismatch to Si ( a Si = 0.543 nm ) is
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2005.10.057