MOVPE growth optimization for optically efficient GaInNAs quantum well structure

A detailed study to achieve optically efficient GaInNAs QWs by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) is reported. It was found that the insertion of GaNAs/InGaAs layers to GaInNAs QW/GaAs barrier is very effective to control the emission wavelength and improve the optical property of QW. Indium rich (as high as 40%) GaInNAs QWs grown at higher V/III ratio are more desirable to extend emission wavelength over 1.3 μm due to reduced incorporation of impurities. The optical efficiencies of the QW structure were confirmed by the lasing performance in edge-emitting laser. The threshold current density and slope efficiency per facet of a 1360 nm laser diode are measured to be 892 A/cm 2 and 0.135 W/A, respectively.