Unified model for collector charge in heterojunction bipolar transistors

The base-collector capacitance and the collector transit-time in GaAs-based heterojunction bipolar transistors depend not only on base-collector voltage, but also on collector current. This has to be taken into account in a large-signal model. However, since collector transit-time and capacitance ar...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2002-07, Vol.50 (7), p.1747-1751
Hauptverfasser: Rudolph, M., Doerner, R., Beilenhoff, K., Heymann, P.
Format: Artikel
Sprache:eng
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Zusammenfassung:The base-collector capacitance and the collector transit-time in GaAs-based heterojunction bipolar transistors depend not only on base-collector voltage, but also on collector current. This has to be taken into account in a large-signal model. However, since collector transit-time and capacitance are both caused by the charge stored in the collector space-charge region, it is not possible to model them independently of each other. This paper investigates the interrelation between collector capacitance and transit-time due to transcapacitance effects, and presents an analytical unified description for both quantities, that is derived from measurement-extracted small-signal equivalent circuits. The model is verified by comparison of simulation and measurement data.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2002.800425