GaAs/AlGaAs heterojunction bipolar transistors for integrated circuit applications

GaAs/AlGaAs heterojunction bipolar transistors for integrated circuit applications

Molecular-beam epitaxy (MBE) and ion implantation were used to fabricate GaAs/AlGaAs heterojunction bipolar transistors with buried wide bandgap emitters. Inverted-mode current gains of ∼ 100 were obtained, demonstrating the feasibility of this technology for I 2 L types of digital integrated circui...

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Veröffentlicht in:IEEE electron device letters 1982-02, Vol.3 (2), p.43-45
Hauptverfasser: McLevige, W.V., Yuan, H.T., Duncan, W.M., Frensley, W.R., Doerbeck, F.H., Morkoc, H., Drummond, T.J.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Application specific integrated circuits
Bipolar integrated circuits
Digital integrated circuits
Epitaxial growth
Gallium arsenide
Heterojunction bipolar transistors
Implants
Microwave transistors
Molecular beam epitaxial growth
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Zusammenfassung:Molecular-beam epitaxy (MBE) and ion implantation were used to fabricate GaAs/AlGaAs heterojunction bipolar transistors with buried wide bandgap emitters. Inverted-mode current gains of ∼ 100 were obtained, demonstrating the feasibility of this technology for I 2 L types of digital integrated circuits.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1982.25471