A monolithic silicon wide-band amplifier from DC to 1 GHz

Monolithic integration of a wide-band amplifier with uniform gain from dc to 1 GHz is described. By choosing an essentially simple circuit both for construction and evaluation it is shown that the collective application of microwave transistor diffusions, double layer interconnections, beam leads, a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE journal of solid-state circuits 1973-12, Vol.8 (6), p.414-419
Hauptverfasser:	Coughlin, J.B., Gelsing, R.J.H., Jochems, P.J.W., van der Laak, H.J.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Broadband amplifiers Ceramics Frequency Integrated circuit interconnections Microstrip Microwave circuits Microwave transistors Monolithic integrated circuits Silicon Structural beams
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!