A monolithic silicon wide-band amplifier from DC to 1 GHz

A monolithic silicon wide-band amplifier from DC to 1 GHz

Monolithic integration of a wide-band amplifier with uniform gain from dc to 1 GHz is described. By choosing an essentially simple circuit both for construction and evaluation it is shown that the collective application of microwave transistor diffusions, double layer interconnections, beam leads, a...

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Veröffentlicht in:IEEE journal of solid-state circuits 1973-12, Vol.8 (6), p.414-419
Hauptverfasser: Coughlin, J.B., Gelsing, R.J.H., Jochems, P.J.W., van der Laak, H.J.M.
Format: Artikel
Sprache:eng
Schlagworte:
Broadband amplifiers
Ceramics
Frequency
Integrated circuit interconnections
Microstrip
Microwave circuits
Microwave transistors
Monolithic integrated circuits
Silicon
Structural beams
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Zusammenfassung:Monolithic integration of a wide-band amplifier with uniform gain from dc to 1 GHz is described. By choosing an essentially simple circuit both for construction and evaluation it is shown that the collective application of microwave transistor diffusions, double layer interconnections, beam leads, air isolation, and microstriplines on ceramic substrates extends the range of operation to beyond 1 GHZ. Gain values of 12 dB flat within 0.5 dB for a two- stage amplifier and nearly 50 dB flat within 1 dB for cascaded amplifiers from low frequencies to 1 GHz are achieved. The direction for further technological improvements is indicated.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.1973.1050431