Hexagonal Boron Nitride as an Intermediate Layer for Gallium Nitride Epitaxial Growth in Near-Ultraviolet Light-Emitting Diodes

We introduce the development of gallium nitride (GaN) layers by employing graphene and hexagonal boron nitride (h-BN) as intermediary substrates. This study demonstrated the successful growth of GaN with a uniformly smooth surface morphology on h-BN. In order to evaluate the crystallinity of GaN gro...

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Veröffentlicht in:Materials 2023-11, Vol.16 (22), p.7216
Hauptverfasser: Park, Ah-Hyun, Seo, Tae-Hoon
Format: Artikel
Sprache:eng
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Zusammenfassung:We introduce the development of gallium nitride (GaN) layers by employing graphene and hexagonal boron nitride (h-BN) as intermediary substrates. This study demonstrated the successful growth of GaN with a uniformly smooth surface morphology on h-BN. In order to evaluate the crystallinity of GaN grown on h-BN, a comparison was conducted with GaN grown on a sapphire substrate. Photoluminescence spectroscopy and X-ray diffraction confirmed that the crystallinity of GaN deposited on h-BN was inferior to that of GaN grown on conventional GaN. To validate the practical applicability of the GaN layer grown on h-BN, we subsequently grew an NUV-LED structure and fabricated a device that operated well in optoelectrical performance experiments. Our findings validate the potential usefulness of h-BN to be a substrate in the direct growth of a GaN layer.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma16227216