High-power < e1 > V < /e1 > -band AlInAs/GaInAs on InP HEMTs

The DC and RF performance of delta-doped channel AlInAs/GaInAs on InP power high-electron-mobility transistors (HEMTs) are reported. A 450-mum-wide device with a gate-length of 0.22 mum has achieved an output power of 150 mW (at the 1-dB gain compression point) with power-added efficiency of 20% at...

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Veröffentlicht in:	IEEE electron device letters 1993-04, Vol.14 (4), p.188-189
Hauptverfasser:	Matloubian, M, Brown, A S, Nguyen, L D, Melendes, M A, Larson, L E, Delancey, M J, Pence, J E, Rhodes, R A, Thompson, M A, Henige, J A
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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