High-power < e1 > V < /e1 > -band AlInAs/GaInAs on InP HEMTs

The DC and RF performance of delta-doped channel AlInAs/GaInAs on InP power high-electron-mobility transistors (HEMTs) are reported. A 450-mum-wide device with a gate-length of 0.22 mum has achieved an output power of 150 mW (at the 1-dB gain compression point) with power-added efficiency of 20% at 57 GHz. The device has a saturated output power of 200 mW with power-added efficiency of 17%. This is the highest output power measured from a single InP-based HEMT at this frequency, and demonstrates the feasibility of these HEMTs for high-power applications in addition to low-noise applications at < e1 > V < /e1 > -band