Giant magnetoresistance induced by magnetic barriers
We present experimental results for hybrid ferromagnet/semiconductor devices in which 2D electrons propagate through sub-micron width magnetic barriers. Magnetoresistances, MR, of /spl sim/1000% are found at low temperatures and /spl sim/1% at room temperature. We compared the measured behavior with...
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| Veröffentlicht in: | IEEE transactions on magnetics 2001-07, Vol.37 (4), p.1992-1994 |
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| Hauptverfasser: | , , , , , , , , |
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| Sprache: | eng |
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| container_end_page | 1994 |
|---|---|
| container_issue | 4 |
| container_start_page | 1992 |
| container_title | IEEE transactions on magnetics |
| container_volume | 37 |
| creator | Kubrak, V. Edmonds, K.W. Neumann, A.C. Gallagher, B.L. Main, P.C. Henini, M. Marrows, C.H. Hickey, B.J. Thoms, S. |
| description | We present experimental results for hybrid ferromagnet/semiconductor devices in which 2D electrons propagate through sub-micron width magnetic barriers. Magnetoresistances, MR, of /spl sim/1000% are found at low temperatures and /spl sim/1% at room temperature. We compared the measured behavior with numerical calculations and give the conditions needed to achieve large room temperature MR. |
| doi_str_mv | 10.1109/20.951031 |
| format | Article |
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Magnetoresistances, MR, of /spl sim/1000% are found at low temperatures and /spl sim/1% at room temperature. We compared the measured behavior with numerical calculations and give the conditions needed to achieve large room temperature MR.</description><identifier>ISSN: 0018-9464</identifier><identifier>EISSN: 1941-0069</identifier><identifier>DOI: 10.1109/20.951031</identifier><identifier>CODEN: IEMGAQ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Barriers ; Electronics ; Electrons ; Exact sciences and technology ; Ferromagnetism ; Giant magnetoresistance ; Magnetic anisotropy ; Magnetic devices ; Magnetic field measurement ; Magnetic fields ; Magnetic sensors ; Magnetic separation ; Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc ; Magnetism ; Mathematical analysis ; Perpendicular magnetic anisotropy ; Saturation magnetization ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Magnetoresistances, MR, of /spl sim/1000% are found at low temperatures and /spl sim/1% at room temperature. We compared the measured behavior with numerical calculations and give the conditions needed to achieve large room temperature MR.</description><subject>Applied sciences</subject><subject>Barriers</subject><subject>Electronics</subject><subject>Electrons</subject><subject>Exact sciences and technology</subject><subject>Ferromagnetism</subject><subject>Giant magnetoresistance</subject><subject>Magnetic anisotropy</subject><subject>Magnetic devices</subject><subject>Magnetic field measurement</subject><subject>Magnetic fields</subject><subject>Magnetic sensors</subject><subject>Magnetic separation</subject><subject>Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc</subject><subject>Magnetism</subject><subject>Mathematical analysis</subject><subject>Perpendicular magnetic anisotropy</subject><subject>Saturation magnetization</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Temperature dependence</subject><subject>Two dimensional</subject><issn>0018-9464</issn><issn>1941-0069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0c1LwzAYBvAgCs7pwaunIqh46Mx3k6MMncLAi55Dmr6VjK2dSXvYf29Gi4IH9RTC-8sTeB-EzgmeEYL1HcUzLQhm5ABNiOYkx1jqQzTBmKhcc8mP0UmMq3TliU0QX3jbdNnGvjfQtQGij51tHGS-qXoHVVbuxqF3WWlD8BDiKTqq7TrC2XhO0dvjw-v8KV--LJ7n98vcccm6vAIHEhjRohK0VIWVTJauqItaVQy4hIKJUpbMMkesICXW1FlRCyolqKISbIpuhtxtaD96iJ3Z-OhgvbYNtH00mnApKCMyyetfJVWa0kKzf0DGMMXkbygLwZniCV7-gKu2D03ai1GKK0rS3wndDsiFNsYAtdkGv7FhZwg2--IMxWYoLtmrMdBGZ9d1SH34-P2AY62E3mdeDM4DwNd4DPkE-lSddQ</recordid><startdate>20010701</startdate><enddate>20010701</enddate><creator>Kubrak, V.</creator><creator>Edmonds, K.W.</creator><creator>Neumann, A.C.</creator><creator>Gallagher, B.L.</creator><creator>Main, P.C.</creator><creator>Henini, M.</creator><creator>Marrows, C.H.</creator><creator>Hickey, B.J.</creator><creator>Thoms, S.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Solid state devices</topic><topic>Temperature dependence</topic><topic>Two dimensional</topic><toplevel>online_resources</toplevel><creatorcontrib>Kubrak, V.</creatorcontrib><creatorcontrib>Edmonds, K.W.</creatorcontrib><creatorcontrib>Neumann, A.C.</creatorcontrib><creatorcontrib>Gallagher, B.L.</creatorcontrib><creatorcontrib>Main, P.C.</creatorcontrib><creatorcontrib>Henini, M.</creatorcontrib><creatorcontrib>Marrows, C.H.</creatorcontrib><creatorcontrib>Hickey, B.J.</creatorcontrib><creatorcontrib>Thoms, S.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on magnetics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kubrak, V.</au><au>Edmonds, K.W.</au><au>Neumann, A.C.</au><au>Gallagher, B.L.</au><au>Main, P.C.</au><au>Henini, M.</au><au>Marrows, C.H.</au><au>Hickey, B.J.</au><au>Thoms, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Giant magnetoresistance induced by magnetic barriers</atitle><jtitle>IEEE transactions on magnetics</jtitle><stitle>TMAG</stitle><date>2001-07-01</date><risdate>2001</risdate><volume>37</volume><issue>4</issue><spage>1992</spage><epage>1994</epage><pages>1992-1994</pages><issn>0018-9464</issn><eissn>1941-0069</eissn><coden>IEMGAQ</coden><abstract>We present experimental results for hybrid ferromagnet/semiconductor devices in which 2D electrons propagate through sub-micron width magnetic barriers. 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| identifier | ISSN: 0018-9464 |
| ispartof | IEEE transactions on magnetics, 2001-07, Vol.37 (4), p.1992-1994 |
| issn | 0018-9464 1941-0069 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Barriers Electronics Electrons Exact sciences and technology Ferromagnetism Giant magnetoresistance Magnetic anisotropy Magnetic devices Magnetic field measurement Magnetic fields Magnetic sensors Magnetic separation Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.) domain-motion devices, etc Magnetism Mathematical analysis Perpendicular magnetic anisotropy Saturation magnetization Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature dependence Two dimensional |
| title | Giant magnetoresistance induced by magnetic barriers |
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