Giant magnetoresistance induced by magnetic barriers

We present experimental results for hybrid ferromagnet/semiconductor devices in which 2D electrons propagate through sub-micron width magnetic barriers. Magnetoresistances, MR, of /spl sim/1000% are found at low temperatures and /spl sim/1% at room temperature. We compared the measured behavior with...

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Veröffentlicht in:	IEEE transactions on magnetics 2001-07, Vol.37 (4), p.1992-1994
Hauptverfasser:	Kubrak, V., Edmonds, K.W., Neumann, A.C., Gallagher, B.L., Main, P.C., Henini, M., Marrows, C.H., Hickey, B.J., Thoms, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Barriers Electronics Electrons Exact sciences and technology Ferromagnetism Giant magnetoresistance Magnetic anisotropy Magnetic devices Magnetic field measurement Magnetic fields Magnetic sensors Magnetic separation Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.) domain-motion devices, etc Magnetism Mathematical analysis Perpendicular magnetic anisotropy Saturation magnetization Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature dependence Two dimensional
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Beschreibung
Zusammenfassung:	We present experimental results for hybrid ferromagnet/semiconductor devices in which 2D electrons propagate through sub-micron width magnetic barriers. Magnetoresistances, MR, of /spl sim/1000% are found at low temperatures and /spl sim/1% at room temperature. We compared the measured behavior with numerical calculations and give the conditions needed to achieve large room temperature MR.
ISSN:	0018-9464 1941-0069
DOI:	10.1109/20.951031