Distribution of base dopant for transit time minimization in a bipolar transistor

Distribution of base dopant for transit time minimization in a bipolar transistor

A means to determine the doping profile minimizing base transit time in a bipolar transistor is presented, assuming that the width of the neutral base is held constant. It is found that the optimum profile is not close to the exponential decrease from emitter to collector predicted by earlier studie...

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Veröffentlicht in:IEEE transactions on electron devices 1996-01, Vol.43 (1), p.170-172
Hauptverfasser: Winterton, S.S., Searles, S., Peters, C.J., Tarr, N.G., Pulfrey, D.L.
Format: Artikel
Sprache:eng
Schlagworte:
Bipolar transistors
Calculus
Charge carrier processes
Delay effects
Doping profiles
Equations
Heterojunction bipolar transistors
Quasi-doping
Silicon
Spontaneous emission
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Beschreibung
Zusammenfassung:A means to determine the doping profile minimizing base transit time in a bipolar transistor is presented, assuming that the width of the neutral base is held constant. It is found that the optimum profile is not close to the exponential decrease from emitter to collector predicted by earlier studies.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.477610