High gain monolithic W-band low noise amplifiers based on pseudomorphic high electron mobility transistors

High gain monolithic W-band low noise amplifiers based on pseudomorphic high electron mobility transistors

Five versions of monolithic W-band 0.1 /spl mu/m AlGaAs-InGaAs-GaAs pseudomorphic HEMT, four-stage, low noise amplifiers based on two different designs were developed. These millimeter wave monolithic integrated circuits have produced a minimum noise figure of 3.5 dB with 23.0 dB gain at 92 GHz and...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1994-12, Vol.42 (12), p.2590-2597
Hauptverfasser: Der-Wei Tu, Duncan, S.W., Eskandarian, A., Golja, B., Kane, B.C., Svensson, S.P., Weinreb, S., Byer, N.E.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Bonding
Circuit properties
Coplanar waveguides
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Gain
Integrated circuit noise
Low-noise amplifiers
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
MIMICs
Monolithic integrated circuits
Noise figure
PHEMTs
Production
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Zusammenfassung:Five versions of monolithic W-band 0.1 /spl mu/m AlGaAs-InGaAs-GaAs pseudomorphic HEMT, four-stage, low noise amplifiers based on two different designs were developed. These millimeter wave monolithic integrated circuits have produced a minimum noise figure of 3.5 dB with 23.0 dB gain at 92 GHz and a maximum gain of 33.5 dB with a 6.2 dB noise figure at 102 GHz. This is the highest gain yet reported for a single chip W-band amplifier. The chips feature coplanar waveguide circuit elements and compact size for low-cost production, single-polarity bias requirement, and a minimum of DC bonding pads.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.339801