A high speed burst mode optoelectronic integrated circuit photoreceiver using InP/InGaAs HBT's

A high speed burst mode optoelectronic integrated circuit photoreceiver using InP/InGaAs HBT's

A novel monolithic differential photoreceiver has been realized using InP/InGaAs heterojunction bipolar transistors. This dc-coupled differential OEIC operated successfully with both continuous and burst-mode data streams up to 5 Gb/s with a sensitivity of -18.6 dBm for the continuous mode operation...

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Veröffentlicht in:IEEE photonics technology letters 1994-07, Vol.6 (7), p.817-818
Hauptverfasser: Lunardi, L., Chandrasekhar, S., Swartz, R.G., Hamm, R.A., Qua, G.J.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Circuit properties
Detectors
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Heterojunction bipolar transistors
High speed integrated circuits
Indium gallium arsenide
Indium phosphide
Miscellaneous
Molecular beam epitaxial growth
Optical and optoelectronic circuits
Optoelectronic devices
Photodetectors
PIN photodiodes
Preamplifiers
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Zusammenfassung:A novel monolithic differential photoreceiver has been realized using InP/InGaAs heterojunction bipolar transistors. This dc-coupled differential OEIC operated successfully with both continuous and burst-mode data streams up to 5 Gb/s with a sensitivity of -18.6 dBm for the continuous mode operation at a bit error rate of 10/sup -9/. There was a 1.5 dB penalty of the sensitivity value in burst-mode operation. This is the first demonstration of an OEIC for burst-mode operation at high speeds.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.311464