Modifying Electronic Structure of Bismuth Telluride Through S Doping and Te Vacancy Engineering for Enhanced Zn‐Ion Storage Ability in Aqueous Zn‐proton Hybrid Ion Batteries

Bismuth chalcogenides are used as cathode materials in Zn‐proton hybrid ion batteries, which exhibit an ultraflat discharge plateau that is favorable for practical applications. Unfortunately, their capacity is not competitive, and their charge storage mechanisms are ambiguous, both of which hinder their further development. In this study, S‐doped Bi2Te3−x (SBT) nanosheets are prepared by tellurizing a Bi2O2S precursor using a hydrothermal process. As revealed by density functional theory analyses, the S dopant and its induced Te vacancies can distinctly manipulate the electronic structure of SBT, resulting in decent electrical conductivity and more negative adsorption energy to Zn2+. These advantages boost the Zn2+ storage ability of SBT materials. Consequently, compared with defect‐free Bi2Te3, the SBT cathodes have superior specific capacity, rate capability, and cycling stability. S‐doped Bi2Te3−x (SBT) nanosheets are prepared using a hydrothermal process by tellurizing a Bi2O2S precursor. The S dopant and its induced Te vacancies can distinctly manipulate the electronic structure of SBT, resulting in decent electrical conductivity and more negative adsorption energy to Zn2+. Benefitting from the proton and Zn2+ co‐inserted process, the specific capacity of SBT is enhanced.