Growth and characterization of Zn1-xCdxO films using remote plasma MOCVD
Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan Zn1-xCdxO films were successfully grown by remote plasma enhanced metalorganic chemical vapor deposition (RPEMOCVD) with diethyl zinc, dimethyl cadmium, and oxygen plasma. The Cd composition x in the Zn1-xCdxO films was tuned by changing a...
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Veröffentlicht in: | Applied surface science 2005-05, Vol.244 (1-4), p.381-384 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan Zn1-xCdxO films were successfully grown by remote plasma enhanced metalorganic chemical vapor deposition (RPEMOCVD) with diethyl zinc, dimethyl cadmium, and oxygen plasma. The Cd composition x in the Zn1-xCdxO films was tuned by changing a flow rate of group-II sources. With increasing the Cd composition x, the crystal structure was changed from wurzite (WZ) to rock-salt (RS). The optical band-gap of the Zn1-xCdO films with the wurzite structure up to x < or = 0.7 varied from 3.3 eV down to 1.9 eV. |
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ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/j.apsusc.2004.10.094 |