A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate

This work presents a two-stage high-power amplifier monolithic microwave integrated circuit (MMIC) operating between 9 GHz and 11 GHz based on a fully integrated AlGaN/GaN high electron mobility transistor (HEMT) technology on s.i. SiC substrate and is suitable for radar applications. The MMIC devic...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2005-07, Vol.15 (7), p.460-462
Hauptverfasser:	van Raay, F., Quay, R., Kiefer, R., Benkhelifa, F., Raynor, B., Pletschen, W., Kuri, M., Massler, H., Muller, S., Dammann, M., Mikulla, M., Schlechtweg, M., Weimann, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Applied sciences Circuit properties Coplanar waveguide (CPW) Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Gallium nitride HEMTs High power amplifiers microstrip (MSL) Microwave amplifiers Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwave devices Microwave integrated circuits microwave power field effect transistors (FET) amplifiers MMICs modulation-doped field effect transistors (MODFETs) phased array radar Power amplifiers reliability Silicon carbide
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Zusammenfassung:	This work presents a two-stage high-power amplifier monolithic microwave integrated circuit (MMIC) operating between 9 GHz and 11 GHz based on a fully integrated AlGaN/GaN high electron mobility transistor (HEMT) technology on s.i. SiC substrate and is suitable for radar applications. The MMIC device with a chip size of 4.5/spl times/3 mm/sup 2/ yields a linear gain of 20 dB and a maximum pulsed saturated output power of 13.4 W at 10 GHz equivalent to 3.3 W/mm at V/sub DS/=35V, 10% duty cycle, and a gain compression level of 5 dB. Further, dc reliability data are given for the MMIC HEMT technology.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/LMWC.2005.851560