9.4-W/mm power density AlGaN-GaN HEMTs on free-standing GaN substrates

High power microwave AlGaN-GaN high electron-mobility transistors (HEMTs) on free-standing GaN substrates are demonstrated for the first time. Measured gate leakage was -2.2 μA/mm at -20 V and -10 μA/mm at -45 V gate bias. When operated at a drain bias of 50 V, devices showed a record continuous-wav...

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Veröffentlicht in:IEEE electron device letters 2004-09, Vol.25 (9), p.596-598
Hauptverfasser: Chu, K.K., Chao, P.C., Pizzella, M.T., Actis, R., Meharry, D.E., Nichols, K.B., Vaudo, R.P., Xu, X., Flynn, J.S., Dion, J., Brandes, G.R.
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Sprache:eng
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Zusammenfassung:High power microwave AlGaN-GaN high electron-mobility transistors (HEMTs) on free-standing GaN substrates are demonstrated for the first time. Measured gate leakage was -2.2 μA/mm at -20 V and -10 μA/mm at -45 V gate bias. When operated at a drain bias of 50 V, devices showed a record continuous-wave output power density of 9.4 W/mm at 10 GHz with an associated power-added efficiency of 40%. Long-term stability of device RF operation was also examined. Under room conditions, devices driven at 25 V and 3-dB gain compression remained stable in 200 h, degrading only by 0.18 dB in output power. Such results illustrate the potential of GaN substrate technology in supporting reliable, high performance AlGaN-GaN HEMTs for microwave power applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.833847