1 W Ku-band AlGaAs/GaAs power HBT''s with 72%25 peak power-addedefficiency

1 W Ku-band AlGaAs/GaAs power HBT''s with 72%25 peak power-addedefficiency

High power and high-efficiency multi-finger heterojunction bipolar transistors (HBT's) have been successfully realized at Ku-band by using an optimum emitter ballasting resistor and a plated heat sink (PHS) structure. Output power of 1 W with power-added efficiency (PAE) of 72% at 12 GHz has be...

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Veröffentlicht in:IEEE transactions on electron devices 1995-11, Vol.42 (11), p.1890-1896
Hauptverfasser: Shimura, T, Sakai, M, Izumi, S, Nakano, H, Matsuoka, H, Inoue, A, Udomoto, J, Kosaki, K, Kuragaki, T, Takano, H, Sonoda, T, Takamiya, S
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Sprache:eng
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Zusammenfassung:High power and high-efficiency multi-finger heterojunction bipolar transistors (HBT's) have been successfully realized at Ku-band by using an optimum emitter ballasting resistor and a plated heat sink (PHS) structure. Output power of 1 W with power-added efficiency (PAE) of 72% at 12 GHz has been achieved from a 10-finger HBT with the total emitter size of 300 mum(2). 72% PAE with the output power density of 5.0 W/mm is the best performance ever reported for solid-state power devices with output powers more than 1 W at Ku-band
ISSN:0018-9383
DOI:10.1109/16.469393