Tunable barium strontium titanate thin film capacitors for RF and microwave applications

The measurement results for thin film barium strontium titanate (BST) based voltage tunable capacitors intended for RF applications are reported. At 9 V DC, BST capacitors fabricated using MOCVD (metalorganic chemical vapor deposition) method achieved 71% (3.4:1) tunability. The measured device qual...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2002-01, Vol.12 (1), p.3-5
Hauptverfasser:	Tombak, A., Maria, J.-P., Ayguavives, F., Zhang Jin, Stauf, G.T., Kingon, A.I., Mortazawi, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Barium Barium strontium titanates Binary search trees Capacitance Capacitors Circuit properties Devices Dielectric loss Dielectric losses Dielectric measurements Diodes Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Radio frequencies Radio frequency Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Strontium Thin films Titanium compounds Transistors Varactors
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Zusammenfassung:	The measurement results for thin film barium strontium titanate (BST) based voltage tunable capacitors intended for RF applications are reported. At 9 V DC, BST capacitors fabricated using MOCVD (metalorganic chemical vapor deposition) method achieved 71% (3.4:1) tunability. The measured device quality factor (Q) for BST varactors is comparable with the device Q for commercially available varactor diodes of similar capacitance. The typical dielectric loss tangent was in the range 0.003-0.009 at VHF. Large signal measurement and modeling results for BST thin film capacitors are also presented.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/7260.975716