Detailed analysis of edge effects in SIMOX-MOS transistors
A comprehensive investigation of edge effects in LOCOS-isolated silicon-on-insulator devices is made by combining the measurements of the static characteristics, charge pumping, and noise. Even when a substrate bias is used to mask the conduction on the island edges, the high-frequency edge effects...
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| Veröffentlicht in: | IEEE transactions on electron devices 1992-04, Vol.39 (4), p.874-882 |
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| container_end_page | 882 |
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| container_issue | 4 |
| container_start_page | 874 |
| container_title | IEEE transactions on electron devices |
| container_volume | 39 |
| creator | Elewa, T. Kleveland, B. Cristoloveanu, S. Boukriss, B. Chovet, A. |
| description | A comprehensive investigation of edge effects in LOCOS-isolated silicon-on-insulator devices is made by combining the measurements of the static characteristics, charge pumping, and noise. Even when a substrate bias is used to mask the conduction on the island edges, the high-frequency edge effects are still detectable. Appropriate models are proposed to separate the edge contribution from those of the front and back interfaces. It is found that the defect density on the edges is inhomogeneous, increasing vertically from the top to the bottom of the film and laterally from the middle to the end of the channel. Slow traps are identified at the back interface, close to the source/drain junctions.< > |
| doi_str_mv | 10.1109/16.127478 |
| format | Article |
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Even when a substrate bias is used to mask the conduction on the island edges, the high-frequency edge effects are still detectable. Appropriate models are proposed to separate the edge contribution from those of the front and back interfaces. It is found that the defect density on the edges is inhomogeneous, increasing vertically from the top to the bottom of the film and laterally from the middle to the end of the channel. Slow traps are identified at the back interface, close to the source/drain junctions.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.127478</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Charge measurement ; Charge pumps ; Current measurement ; Doping ; Electronics ; Exact sciences and technology ; MOSFETs ; Noise measurement ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Even when a substrate bias is used to mask the conduction on the island edges, the high-frequency edge effects are still detectable. Appropriate models are proposed to separate the edge contribution from those of the front and back interfaces. It is found that the defect density on the edges is inhomogeneous, increasing vertically from the top to the bottom of the film and laterally from the middle to the end of the channel. Slow traps are identified at the back interface, close to the source/drain junctions.< ></description><subject>Applied sciences</subject><subject>Charge measurement</subject><subject>Charge pumps</subject><subject>Current measurement</subject><subject>Doping</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>MOSFETs</subject><subject>Noise measurement</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductor films</subject><subject>Silicon on insulator technology</subject><subject>Subthreshold current</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNqNkEtLw0AQgBdRsD4OXj3lIIKH1J19Jt6kvgotPVTBW9hOZiWSJjWbHvrvXUnRq-xhWPjmg_kYuwA-BuD5LZgxCKtsdsBGoLVNc6PMIRtxDlmay0wes5MQPuPXKCVG7O6BelfVVCaucfUuVCFpfULlByXkPWEfkqpJltP54j2dL5ZJ37kmQn3bhTN25F0d6Hw_T9nb0-Pr5CWdLZ6nk_tZiorLPiWZrXRpchACNXIPSqNCY9GBIFWuQFntVmi5dZq4U4BohUInUeW5UkaesuvBu-nary2FvlhXAamuXUPtNhQiyyyXYP8Bxhc7RPBmALFrQ-jIF5uuWrtuVwAvfjIWYIohY2Sv9lIX0NU-3o9V-F3QQouYMmKXA1YR0Z9ucHwDHB93eA</recordid><startdate>19920401</startdate><enddate>19920401</enddate><creator>Elewa, T.</creator><creator>Kleveland, B.</creator><creator>Cristoloveanu, S.</creator><creator>Boukriss, B.</creator><creator>Chovet, A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>19920401</creationdate><title>Detailed analysis of edge effects in SIMOX-MOS transistors</title><author>Elewa, T. ; Kleveland, B. ; Cristoloveanu, S. ; Boukriss, B. ; Chovet, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c403t-e38b5d69122c5c0f145c4c67ca12e4db1475abc707a5e0a41cc724ca3c4994463</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Applied sciences</topic><topic>Charge measurement</topic><topic>Charge pumps</topic><topic>Current measurement</topic><topic>Doping</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>MOSFETs</topic><topic>Noise measurement</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductor films</topic><topic>Silicon on insulator technology</topic><topic>Subthreshold current</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Elewa, T.</creatorcontrib><creatorcontrib>Kleveland, B.</creatorcontrib><creatorcontrib>Cristoloveanu, S.</creatorcontrib><creatorcontrib>Boukriss, B.</creatorcontrib><creatorcontrib>Chovet, A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Elewa, T.</au><au>Kleveland, B.</au><au>Cristoloveanu, S.</au><au>Boukriss, B.</au><au>Chovet, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Detailed analysis of edge effects in SIMOX-MOS transistors</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1992-04-01</date><risdate>1992</risdate><volume>39</volume><issue>4</issue><spage>874</spage><epage>882</epage><pages>874-882</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A comprehensive investigation of edge effects in LOCOS-isolated silicon-on-insulator devices is made by combining the measurements of the static characteristics, charge pumping, and noise. Even when a substrate bias is used to mask the conduction on the island edges, the high-frequency edge effects are still detectable. Appropriate models are proposed to separate the edge contribution from those of the front and back interfaces. It is found that the defect density on the edges is inhomogeneous, increasing vertically from the top to the bottom of the film and laterally from the middle to the end of the channel. Slow traps are identified at the back interface, close to the source/drain junctions.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.127478</doi><tpages>9</tpages></addata></record> |
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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1992-04, Vol.39 (4), p.874-882 |
| issn | 0018-9383 1557-9646 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Charge measurement Charge pumps Current measurement Doping Electronics Exact sciences and technology MOSFETs Noise measurement Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor films Silicon on insulator technology Subthreshold current Threshold voltage Transistors |
| title | Detailed analysis of edge effects in SIMOX-MOS transistors |
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