Detailed analysis of edge effects in SIMOX-MOS transistors

A comprehensive investigation of edge effects in LOCOS-isolated silicon-on-insulator devices is made by combining the measurements of the static characteristics, charge pumping, and noise. Even when a substrate bias is used to mask the conduction on the island edges, the high-frequency edge effects are still detectable. Appropriate models are proposed to separate the edge contribution from those of the front and back interfaces. It is found that the defect density on the edges is inhomogeneous, increasing vertically from the top to the bottom of the film and laterally from the middle to the end of the channel. Slow traps are identified at the back interface, close to the source/drain junctions.< >