Evidence of negative charge trapping in high temperature annealed thermal oxide

Evidence of negative charge trapping in high temperature annealed thermal oxide

The effect of high temperature processing of Si/SiO/sub 2//Si sandwich structures has been studied on a thermal dry oxide, by considering charge trapping after irradiation. The radiation-induced charge trapping is shown to be very different in annealed and unannealed structures. The latter reveal in...

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Veröffentlicht in:IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1994-06, Vol.41 (3), p.473-478
Hauptverfasser: Paillet, P., Herve, D., Leray, J.L., Devine, R.A.B.
Format: Artikel
Sprache:eng
Schlagworte:
ANNEALING
Applied sciences
CHALCOGENIDES
Chemical vapor deposition
Compound structure devices
DATA
Electron traps
ELECTRONIC CIRCUITS
Electronics
ELEMENTS
Exact sciences and technology
EXPERIMENTAL DATA
HEAT TREATMENTS
INFORMATION
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
INTERFACES
ION IMPLANTATION
JUNCTIONS
MICROELECTRONIC CIRCUITS
NUMERICAL DATA
Oxidation
OXIDES
OXYGEN COMPOUNDS
Paramagnetic resonance
PHYSICAL RADIATION EFFECTS
Plasma applications
Plasma chemistry
Plasma temperature
RADIATION EFFECTS
Sandwich structures
SEMICONDUCTOR DEVICES
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON COMPOUNDS 440200 > Radiation Effects on Instrument Components, Instruments, or Electronic Systems
SILICON OXIDES
TRAPPING
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Beschreibung
Zusammenfassung:The effect of high temperature processing of Si/SiO/sub 2//Si sandwich structures has been studied on a thermal dry oxide, by considering charge trapping after irradiation. The radiation-induced charge trapping is shown to be very different in annealed and unannealed structures. The latter reveal interfacial trapping behavior, whereas annealed structures exhibit a large trapping of both holes and electrons in the bulk of the oxide, similar to SIMOX oxide behavior.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.299787