Concomitant incorporation of antimony and nitrogen in GaAsSbN lattice-matched to GaAs

GaAsSbN is a potential material for GaAs-based long wavelength optoelectronic devices. In this work, using solid source molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a antimony cracker source, we will demonstrate closely lattice-matched condition of...

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Veröffentlicht in:	Journal of crystal growth 2005-02, Vol.274 (3-4), p.355-361
Hauptverfasser:	Wicaksono, S., Yoon, S.F., Tan, K.H., Cheah, W.K.
Format:	Artikel
Sprache:	eng
Schlagworte:	61.10.−i 68.75.+x 81.05.Ea 81.15.Hi 81.70.Jb A1. Lattice-matched A1. Long wavelength A3. Molecular beam epitaxy B1. GaAsSbN B3. GaAs-based optoelectronic devices Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Iii-v semiconductors Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics
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Zusammenfassung:	GaAsSbN is a potential material for GaAs-based long wavelength optoelectronic devices. In this work, using solid source molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a antimony cracker source, we will demonstrate closely lattice-matched condition of GaAsSbN/GaAs with lattice mismatch
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2004.10.050