A charge-transfer amplifier and an encoded-bus architecture for low-power SRAM's
This paper proposes and reports a low-power SRAM using a charge-transfer (CT) pre-sense amplifier and a bus signal encoding scheme. The CT amplifier overcomes the V/sub th/ relative difference between the pair MOS transistors, and thus reduces the input offset voltage. The encoded-bus scheme reduces...
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Veröffentlicht in: | IEEE journal of solid-state circuits 1998-05, Vol.33 (5), p.793-799 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This paper proposes and reports a low-power SRAM using a charge-transfer (CT) pre-sense amplifier and a bus signal encoding scheme. The CT amplifier overcomes the V/sub th/ relative difference between the pair MOS transistors, and thus reduces the input offset voltage. The encoded-bus scheme reduces the number of signals being switched to cut the capacitive load. These read-path dynamic circuits have eight-timings which a low-power DLL produces. The fabricated 0.35-/spl mu/m-rule 2k-by-16-bit SRAM operated at 50 MHz with the power dissipation of 5 mW at 1 V. |
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ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/4.668995 |