Characteristics of superconducting flux-flow transistors

The operational characteristics and physics of three superconducting thin-film-based transistor structures are compared. The devices are based on the motion of quantized vortices, either Josephson fluxons in a long tunnel junction of Abrikosov fluxons in a superconducting film. The transistor amplif...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) 1991-03, Vol.27 (2), p.3297-3300
Hauptverfasser:	Hohenwarter, G.K.G., Martens, J.S., Thompson, J.H., Beyer, J.B., Nordman, J.E., Ginley, D.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	665411 > Basic Superconductivity Studies-- (1992-) ABRIKOSOV THEORY Applied sciences Circuits CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL STRUCTURE ELECTRIC CONDUCTIVITY ELECTRICAL PROPERTIES Electronics Exact sciences and technology GRAIN BOUNDARIES Impedance Josephson junctions JUNCTION TRANSISTORS JUNCTIONS Magnetic field measurement MAGNETIC FIELDS MAGNETIC FLUX MICROSTRUCTURE PARAMETRIC ANALYSIS PHYSICAL PROPERTIES Physics SEMICONDUCTOR DEVICES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Superconducting devices SUPERCONDUCTING FILMS SUPERCONDUCTING JUNCTIONS Superconducting thin films SUPERCONDUCTIVITY Thin film transistors TRANSISTORS 665412 > Superconducting Devices-- (1992-) TUNNEL EFFECT Voltage
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The operational characteristics and physics of three superconducting thin-film-based transistor structures are compared. The devices are based on the motion of quantized vortices, either Josephson fluxons in a long tunnel junction of Abrikosov fluxons in a superconducting film. The transistor amplification mechanism is accomplished by controlling magnetic field at the boundaries of the structures. An overview of the present understanding of device mechanisms and measured characteristics, including voltampere relations and small and large signal circuit parameters is provided. Demonstrated applications and anticipated limitations are discussed.
ISSN:	0018-9464 1941-0069
DOI:	10.1109/20.133917