Magneto-optics from type-II single quantum dots

We investigated single InP quantum dots embedded in GaAs using micro‐photoluminescence as a function of the excitation intensity. InP/GaAs dots exhibit a type‐II band alignment, which leads to a spatial separation of the carriers. The effect of a magnetic field on these type‐II quantum dots were als...

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Veröffentlicht in:	Physica status solidi. C 2004-01, Vol.1 (3), p.543-546
Hauptverfasser:	Godoy, M. P. F., Nakaema, M. K. K., Iikawa, F., Brasil, M. J. S. P., Bortoleto, J. R. R., Cotta, M. A., Ribeiro, E., Medeiros-Ribeiro, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	71.35.Ji 75.75.+a 78.55.Cr 78.67.Hc
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	We investigated single InP quantum dots embedded in GaAs using micro‐photoluminescence as a function of the excitation intensity. InP/GaAs dots exhibit a type‐II band alignment, which leads to a spatial separation of the carriers. The effect of a magnetic field on these type‐II quantum dots were also investigated through micro‐photoluminescence measurements. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	1610-1634 1610-1642
DOI:	10.1002/pssc.200304035