Mass attenuation coefficients for n-type InSe, InSe:Gd, InSe:Ho and InSe:Er single crystals

Mass attenuation coefficients for n-type InSe, InSe:Gd, InSe:Ho and InSe:Er single crystals

Measurements have been made to determine the mass attenuation coefficients of undoped n-type InSe, and Gd, Ho, Er doped n-InSe single crystals using a Si(Li) detector in the energy region 15.746– 40.930 keV X-ray energies with energy dispersive X-ray fluorescence systems. InSe, InSe:Gd, InSe:Ho and...

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Veröffentlicht in:Journal of quantitative spectroscopy & radiative transfer 2005-02, Vol.90 (3), p.399-407
Hauptverfasser: Icelli, O, Erzeneoglu, S, Guerbulak, B
Format: Artikel
Sprache:eng
Schlagworte:
Crystal growth
Mass attenuation coefficients
Transmission method
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Zusammenfassung:Measurements have been made to determine the mass attenuation coefficients of undoped n-type InSe, and Gd, Ho, Er doped n-InSe single crystals using a Si(Li) detector in the energy region 15.746– 40.930 keV X-ray energies with energy dispersive X-ray fluorescence systems. InSe, InSe:Gd, InSe:Ho and InSe:Er single crystals were grown by using the stockbarger method. The measured values are graphically compared with the theoretical ones obtained using WinXcom.
ISSN:0022-4073
1879-1352
DOI:10.1016/j.jqsrt.2004.04.012