Room-temperature ferromagnetism of (Ga,Mn)N films: effects of Ga flux and growth temperature

We discuss that the effects of Ga flux and growth temperature on ferromagnetic properties of (Ga,Mn)N films grown on sapphire substrate by plasma-enhanced molecular beam epitaxy. The (Ga,Mn)N thin films exhibited ferromagnetic ordering at room temperature without any secondary phases verified by X-r...

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Veröffentlicht in:	Journal of crystal growth 2004-01, Vol.260 (1), p.85-90
Hauptverfasser:	Huh, Kwang-Soo, Ham, Moon-Ho, Jeong, Min-Chang, Myoung, Jae-Min
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Ferromagnetism A1. Ga flux A1. Growth temperature A3. Plasma enhanced molecular beam epitaxy B1. (Ga,Mn)N B2. Diluted magnetic semiconductor Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Magnetic properties and materials Magnetic properties of monolayers and thin films Magnetic properties of surface, thin films and multilayers Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics
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Zusammenfassung:	We discuss that the effects of Ga flux and growth temperature on ferromagnetic properties of (Ga,Mn)N films grown on sapphire substrate by plasma-enhanced molecular beam epitaxy. The (Ga,Mn)N thin films exhibited ferromagnetic ordering at room temperature without any secondary phases verified by X-ray diffraction. It is found that the magnetic properties of the films are improved with decreasing Ga flux. It is also observed that saturation magnetization increases with decreasing the (Ga,Mn)N film growth temperature.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2003.08.034