Absence of local-potential fluctuation effects in Si-doped InxGa1-xN epilayers studied by optical characterizations

We have studied the characteristics of InxGa1-xcN epilayers grown on sapphire substrates by using photoluminescence (PL), optical absorption (OA), photocurrent (PC) and persistent photoconductivity (PPC) measurements. For the undoped InxGa1-xN epilayers containing high In composition, we observed th...

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Veröffentlicht in:	Journal of crystal growth 2005-04, Vol.277 (1-4), p.133-137
Hauptverfasser:	CHUNG, S. J, SENTHIL KUMAR, M, KIM, Y. K, HONG, C.-H, LEE, H. J, SUH, E.-K, JUN, Y.-K
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Iii-v semiconductors Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics
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Zusammenfassung:	We have studied the characteristics of InxGa1-xcN epilayers grown on sapphire substrates by using photoluminescence (PL), optical absorption (OA), photocurrent (PC) and persistent photoconductivity (PPC) measurements. For the undoped InxGa1-xN epilayers containing high In composition, we observed the Stokes shift, S-shaped temperaturedependent PL emission, and PPC effect. These results show a strong dependence on In contents in the properties of InxGa1-xN epilayers. The decay kinetics of the PPC effect has been investigated, from that, the depth of the localization caused by alloy potential fluctuations (APFs) in InxGa1-xN epilayers is determined. However, for Si-doped InxGa1-xN epilayers, the Stokes shift, S-shaped temperature-dependent PL peak shift and PPC effect have not been observed.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2005.01.082