Low temperature, high growth rate epitaxial silicon and silicon germanium alloy films

Epitaxial growth of silicon and silicon germanium alloy films on Si(1 0 0) substrates in an ASM Epsilon ® single wafer reactor system using trisilane and germane has been investigated. The results obtained reveal that it is possible to achieve epitaxial silicon and silicon germanium growth rates at...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied surface science 2004-03, Vol.224 (1), p.41-45
Hauptverfasser:	Todd, Michael A, Weeks, Keith D
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (CVD) Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Epitaxy Exact sciences and technology Physics Si 1− xGe x Silicon germanium
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!