Ge diffusion and solid phase epitaxy growth to form Si1-xGex/Si and Ge on insulator structure
We report growth of Si1-xGex/Si and Ge on insulator by Ge diffusion and SPE (solid phase epitaxy). Different annealing conditions were carried out and evaluated by X-ray diffraction. Ge diffusion and SPE growth of Ge on Si are observed after annealing at 800 DGC. EDX (electron dispersive X-ray) comp...
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| Veröffentlicht in: | Thin solid films 2006-05, Vol.504 (1-2), p.69-72 |
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| container_title | Thin solid films |
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| creator | FEI GAO LEE, S. J BALAKUMAR, S ANYAN DU FOO, Yong-Lim KWONG, Dim-Lee |
| description | We report growth of Si1-xGex/Si and Ge on insulator by Ge diffusion and SPE (solid phase epitaxy). Different annealing conditions were carried out and evaluated by X-ray diffraction. Ge diffusion and SPE growth of Ge on Si are observed after annealing at 800 DGC. EDX (electron dispersive X-ray) composition analysis shows that the top 100 A Si1-xGex layer is quite uniform with Ge content variation of less than 2%. TEM (transmission electron microscopy) picture shows no crystal orientation misalignment between the Si and the top Si1-xGex layer. This simple and cost-effective process can be used to make Si1-xGex /Si substrate for high-mobility metal oxide semiconductor field effect transistor application. In addition, Ge on insulator structure was achieved by SPE lateral growth on pre-patterned SiO2. |
| doi_str_mv | 10.1016/j.tsf.2005.09.043 |
| format | Article |
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| subjects | Applied sciences Cold working, work hardening annealing, quenching, tempering, recovery, and recrystallization textures Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Materials science Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Transport properties of condensed matter (nonelectronic) Treatment of materials and its effects on microstructure and properties |
| title | Ge diffusion and solid phase epitaxy growth to form Si1-xGex/Si and Ge on insulator structure |
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