Low temperature ohmic contacts to gallium arsenide using In and Al

A method of making ohmic contact to n-type GaAs by means of micro-alloying at 320°C for 90 s, resulting in a specific contact resistance of approximately 0.1 Ω.cm 2 is described. This technique involves an aluminum overlay which prevents puddling and thus maintains contact geometry. Such contacts, h...

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Veröffentlicht in:	IEEE transactions on electron devices 1976-03, Vol.23 (3), p.374-374
Hauptverfasser:	Healy, M.P., Mattauch, R.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Alloying Contact resistance Gallium arsenide Ohmic contacts Semiconductor diodes Temperature measurement
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