Low temperature ohmic contacts to gallium arsenide using In and Al

Low temperature ohmic contacts to gallium arsenide using In and Al

A method of making ohmic contact to n-type GaAs by means of micro-alloying at 320°C for 90 s, resulting in a specific contact resistance of approximately 0.1 Ω.cm 2 is described. This technique involves an aluminum overlay which prevents puddling and thus maintains contact geometry. Such contacts, h...

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Veröffentlicht in:IEEE transactions on electron devices 1976-03, Vol.23 (3), p.374-374
Hauptverfasser: Healy, M.P., Mattauch, R.J.
Format: Artikel
Sprache:eng
Schlagworte:
Alloying
Contact resistance
Gallium arsenide
Ohmic contacts
Semiconductor diodes
Temperature measurement
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Zusammenfassung:A method of making ohmic contact to n-type GaAs by means of micro-alloying at 320°C for 90 s, resulting in a specific contact resistance of approximately 0.1 Ω.cm 2 is described. This technique involves an aluminum overlay which prevents puddling and thus maintains contact geometry. Such contacts, having a relatively high specific contact resistance, have the advantage of being formed by low temperature micro-alloying for short times.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1976.18412