Nucleation, growth and transformation of microdefects in FZ-Si
The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at high temperatures is hampered by an entropy barrier. Established is that the pro...
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| Veröffentlicht in: | Semiconductor physics, quantum electronics, and optoelectronics quantum electronics, and optoelectronics, 2004-01, Vol.7 (1), p.16-21 |
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| container_title | Semiconductor physics, quantum electronics, and optoelectronics |
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| creator | Talanin, V I Talanin, I E |
| description | The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at high temperatures is hampered by an entropy barrier. Established is that the process of microdefects formation in silicon proceeds simultaneously by two independent mechanisms: the vacancy and interstitial ones. |
| doi_str_mv | 10.15407/spqeo7.01.016 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1560-8034 |
| ispartof | Semiconductor physics, quantum electronics, and optoelectronics, 2004-01, Vol.7 (1), p.16-21 |
| issn | 1560-8034 1605-6582 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28796290 |
| source | DOAJ Directory of Open Access Journals |
| title | Nucleation, growth and transformation of microdefects in FZ-Si |
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