Nucleation, growth and transformation of microdefects in FZ-Si
The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at high temperatures is hampered by an entropy barrier. Established is that the pro...
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| Veröffentlicht in: | Semiconductor physics, quantum electronics, and optoelectronics quantum electronics, and optoelectronics, 2004-01, Vol.7 (1), p.16-21 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at high temperatures is hampered by an entropy barrier. Established is that the process of microdefects formation in silicon proceeds simultaneously by two independent mechanisms: the vacancy and interstitial ones. |
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| ISSN: | 1560-8034 1605-6582 |
| DOI: | 10.15407/spqeo7.01.016 |