InGaP/InGaAsP/GaAs 0.808 mum separate confinement laser diodes grown by metalorganic chemical vapor deposition

InGaP/InGaAsP/GaAs 0.808 mum separate confinement laser diodes grown by metalorganic chemical vapor deposition

Aluminum-free InGaP/InGaAsP/GaAs separate confinement heterostructures have been grown and used for broad-area stripe diode laser fabrication. The lasers demonstrated a uniform near-field pattern and emission spectrum at lambda=0.808 mum with a full width at half maximum 2 mm, meeting the necessary...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE photonics technology letters 1994-02, Vol.6 (2), p.132-134
Hauptverfasser: Diaz, J, Eliashevich, I, Mobarhan, K, Kolev, E, Wang, L J, Garbuzov, D Z, Razeghi, M
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Aluminum-free InGaP/InGaAsP/GaAs separate confinement heterostructures have been grown and used for broad-area stripe diode laser fabrication. The lasers demonstrated a uniform near-field pattern and emission spectrum at lambda=0.808 mum with a full width at half maximum 2 mm, meeting the necessary requirements for Nd:YAG pumping systems. A threshold current density of 470 A/cm(2) and differential efficiency of 0.7 W/A with series resistance of 0.12 Omicron for 1.37 mm-long diodes have been measured
ISSN:1041-1135
DOI:10.1109/68.275405