On the nucleation model for gallium nitride films grown on sapphire

On the nucleation model for gallium nitride films grown on sapphire

A thermodynamical model of GaN nucleation on sapphire substrates has been developed. Theoretical basis for the understanding of using a short nitridation time, producing a thin monoatomic Al layer before the true nucleation layer, have been given. By using such nucleation conditions, combined with o...

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Veröffentlicht in:Physica status solidi. C 2005-01, Vol.2 (4), p.1280-1283
Hauptverfasser: Vigdorovich, E. N., Arendarenko, A. A., Kharlamov, R. V., Sveshnikov, Yu. N.
Format: Artikel
Sprache:eng
Schlagworte:
68.35.Dv
68.55.Ac
81.15.Gh
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Zusammenfassung:A thermodynamical model of GaN nucleation on sapphire substrates has been developed. Theoretical basis for the understanding of using a short nitridation time, producing a thin monoatomic Al layer before the true nucleation layer, have been given. By using such nucleation conditions, combined with optimised growth conditions for sapphire substrates, a full width at half maximum below 800 arc. sec. has been found for the X‐ray rocking curves. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1610-1634
1610-1642
DOI:10.1002/pssc.200460426