Ferroelectric properties of BiFeO3 films grown by sol-gel process

Several methods have been used to prepare ferroelectromagnetic BiFeO3 films. In this paper, we adopted a sol-gel process to fabricate BiFeO3 films on indium tin oxide (ITO)/glass substrates. X-ray diffraction pattern indicated that the samples are randomly oriented. Cross section scanning microscopy...

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Veröffentlicht in:	Thin solid films 2006-04, Vol.500 (1-2), p.105-109
Hauptverfasser:	Liu, Hongri, Liu, Zuli, Liu, Qing, Yao, Kailun
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Dielectric, piezoelectric, ferroelectric and antiferroelectric materials Dielectrics, piezoelectrics, and ferroelectrics and their properties Exact sciences and technology Liquid phase epitaxy deposition from liquid phases (melts, solutions, and surface layers on liquids) Materials science Methods of deposition of films and coatings film growth and epitaxy Niobates, titanates, tantalates, pzt ceramics, etc Physics
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Zusammenfassung:	Several methods have been used to prepare ferroelectromagnetic BiFeO3 films. In this paper, we adopted a sol-gel process to fabricate BiFeO3 films on indium tin oxide (ITO)/glass substrates. X-ray diffraction pattern indicated that the samples are randomly oriented. Cross section scanning microscopy showed that the thicknesses of both films were about 1DDT2 Dmm and no apparent diffusion between the BiFeO3 films and ITO/glass substrates. Remnant polarization of 2DDT0 and 1DDT75 DmC/cm2were identified by the measuring of electric hysteresis loops for the films annealed at 500 and 600DDGC respectively at an applied field of 108 kV/cm. Dielectric property and loss factor were investigated as a function of frequency. In addition, magnetism was detected at 77 K.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2005.11.041