High-quality MNS capacitors prepared by jet vapor deposition at room temperature

High-quality MNS capacitors prepared by jet vapor deposition at room temperature

The properties of metal-nitride-Si (MNS) capacitors in which the silicon nitride layer is produced by the jet vapor deposition (JVD) technique at room temperature are reported. Despite the room-temperature deposition, the electrical properties of these devices are far better than any previously repo...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 1992-09, Vol.13 (9), p.482-484
Hauptverfasser: Wang, D., Ma, T.-P., Golz, J.W., Halpern, B.L., Schmitt, J.J.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Applied sciences
Capacitors
Chemical vapor deposition
Compound structure devices
Dielectric thin films
Electronics
Etching
Exact sciences and technology
Plasma temperature
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Sputtering
Substrates
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The properties of metal-nitride-Si (MNS) capacitors in which the silicon nitride layer is produced by the jet vapor deposition (JVD) technique at room temperature are reported. Despite the room-temperature deposition, the electrical properties of these devices are far better than any previously reported MNS capacitors. Especially remarkable is the low density of interface traps (D/sub it/
ISSN:0741-3106
1558-0563
DOI:10.1109/55.192802