A new and improved borderless contact (BLC) structure for high-performance Ti-salicide in sub-quarter micron CMOS devices

We demonstrate a new and improved borderless contact (BLC) Ti-salicide process for the fabrication of sub-quarter micron CMOS devices. A low-temperature chemical vapor deposition (CVD) SiO/sub x/N/sub y/ film to act as the selective etching stop layer and the additional n/sup +/ and p/sup +/ source-...

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Veröffentlicht in:	IEEE electron device letters 2000-07, Vol.21 (7), p.344-346
Hauptverfasser:	Liu, Wen-Chau, Thei, Kong-Beng, Wang, Wei-Chou, Pan, Hsi-Jen, Wuu, Shou-Gwo, Lei, Ming-Ta, Wang, Chung-Shu, Cheng, Shiou-Ying
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition CMOS CMOS process CMOS technology Contact Devices Etching Fabrication Implants Leakage current MOS devices Oxynitrides Semiconductor films Thermal stability Titanium
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