Nano on nano
Selective epitaxy of quantum dots using self-assembled segregation promises nanoscale resolution at conventional lithography prices.
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| Veröffentlicht in: | IEEE circuits and devices magazine 2003-05, Vol.19 (3), p.26-31 |
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| container_end_page | 31 |
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| container_issue | 3 |
| container_start_page | 26 |
| container_title | IEEE circuits and devices magazine |
| container_volume | 19 |
| creator | Yeoh, T.S. Liu, C.P. Swint, R.B. Gaur, A. Elarde, V.C. Coleman, J.J. |
| description | Selective epitaxy of quantum dots using self-assembled segregation promises nanoscale resolution at conventional lithography prices. |
| doi_str_mv | 10.1109/MCD.2003.1203175 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_28780916</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1203175</ieee_id><sourcerecordid>2429931851</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-fa1747ec81255a64e3667698dc95268e8e01e275bb0ac5834a13599b4066939c3</originalsourceid><addsrcrecordid>eNpdkD1LA0EQhhdRMCb2gk2wsLtz5vZrtpQYPyBqo_WyWSeQkNzF3aTw37shB4LVW8zzvgyPEFcINSK4u9fJQ90AyBobkGj1iRig1lQhEZ2KAVmtK-mcORcXOa8AUJGCgRi9hbYbd-24LTkSZ4uwznzZ51B8Pk4_Js_V7P3pZXI_q6JEt6sWAa2yHAkbrYNRLI2xxtFXdLoxxMSA3Fg9n0OImqQKKLVzcwXGOOmiHIrb4-42dd97zju_WebI63Voudtn35AlcGgKePMPXHX71JbfPJEqo6CwQHCEYupyTrzw27TchPTjEfzBjS9u_MGN792UyvWxsmTmP7y__gI3Q1r-</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>884359041</pqid></control><display><type>article</type><title>Nano on nano</title><source>IEEE/IET Electronic Library</source><creator>Yeoh, T.S. ; Liu, C.P. ; Swint, R.B. ; Gaur, A. ; Elarde, V.C. ; Coleman, J.J.</creator><creatorcontrib>Yeoh, T.S. ; Liu, C.P. ; Swint, R.B. ; Gaur, A. ; Elarde, V.C. ; Coleman, J.J.</creatorcontrib><description>Selective epitaxy of quantum dots using self-assembled segregation promises nanoscale resolution at conventional lithography prices.</description><identifier>ISSN: 8755-3996</identifier><identifier>EISSN: 1558-1888</identifier><identifier>DOI: 10.1109/MCD.2003.1203175</identifier><identifier>CODEN: ICDMEN</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bonding ; Capacitive sensors ; Circuits ; Gallium arsenide ; Gallium nitride ; Lattices ; MOCVD ; Self-assembly ; Substrates ; Tensile strain</subject><ispartof>IEEE circuits and devices magazine, 2003-05, Vol.19 (3), p.26-31</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2003</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-fa1747ec81255a64e3667698dc95268e8e01e275bb0ac5834a13599b4066939c3</citedby><cites>FETCH-LOGICAL-c319t-fa1747ec81255a64e3667698dc95268e8e01e275bb0ac5834a13599b4066939c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1203175$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1203175$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yeoh, T.S.</creatorcontrib><creatorcontrib>Liu, C.P.</creatorcontrib><creatorcontrib>Swint, R.B.</creatorcontrib><creatorcontrib>Gaur, A.</creatorcontrib><creatorcontrib>Elarde, V.C.</creatorcontrib><creatorcontrib>Coleman, J.J.</creatorcontrib><title>Nano on nano</title><title>IEEE circuits and devices magazine</title><addtitle>CD-M</addtitle><description>Selective epitaxy of quantum dots using self-assembled segregation promises nanoscale resolution at conventional lithography prices.</description><subject>Bonding</subject><subject>Capacitive sensors</subject><subject>Circuits</subject><subject>Gallium arsenide</subject><subject>Gallium nitride</subject><subject>Lattices</subject><subject>MOCVD</subject><subject>Self-assembly</subject><subject>Substrates</subject><subject>Tensile strain</subject><issn>8755-3996</issn><issn>1558-1888</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkD1LA0EQhhdRMCb2gk2wsLtz5vZrtpQYPyBqo_WyWSeQkNzF3aTw37shB4LVW8zzvgyPEFcINSK4u9fJQ90AyBobkGj1iRig1lQhEZ2KAVmtK-mcORcXOa8AUJGCgRi9hbYbd-24LTkSZ4uwznzZ51B8Pk4_Js_V7P3pZXI_q6JEt6sWAa2yHAkbrYNRLI2xxtFXdLoxxMSA3Fg9n0OImqQKKLVzcwXGOOmiHIrb4-42dd97zju_WebI63Voudtn35AlcGgKePMPXHX71JbfPJEqo6CwQHCEYupyTrzw27TchPTjEfzBjS9u_MGN792UyvWxsmTmP7y__gI3Q1r-</recordid><startdate>200305</startdate><enddate>200305</enddate><creator>Yeoh, T.S.</creator><creator>Liu, C.P.</creator><creator>Swint, R.B.</creator><creator>Gaur, A.</creator><creator>Elarde, V.C.</creator><creator>Coleman, J.J.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>200305</creationdate><title>Nano on nano</title><author>Yeoh, T.S. ; Liu, C.P. ; Swint, R.B. ; Gaur, A. ; Elarde, V.C. ; Coleman, J.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-fa1747ec81255a64e3667698dc95268e8e01e275bb0ac5834a13599b4066939c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Bonding</topic><topic>Capacitive sensors</topic><topic>Circuits</topic><topic>Gallium arsenide</topic><topic>Gallium nitride</topic><topic>Lattices</topic><topic>MOCVD</topic><topic>Self-assembly</topic><topic>Substrates</topic><topic>Tensile strain</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yeoh, T.S.</creatorcontrib><creatorcontrib>Liu, C.P.</creatorcontrib><creatorcontrib>Swint, R.B.</creatorcontrib><creatorcontrib>Gaur, A.</creatorcontrib><creatorcontrib>Elarde, V.C.</creatorcontrib><creatorcontrib>Coleman, J.J.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE/IET Electronic Library</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE circuits and devices magazine</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yeoh, T.S.</au><au>Liu, C.P.</au><au>Swint, R.B.</au><au>Gaur, A.</au><au>Elarde, V.C.</au><au>Coleman, J.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Nano on nano</atitle><jtitle>IEEE circuits and devices magazine</jtitle><stitle>CD-M</stitle><date>2003-05</date><risdate>2003</risdate><volume>19</volume><issue>3</issue><spage>26</spage><epage>31</epage><pages>26-31</pages><issn>8755-3996</issn><eissn>1558-1888</eissn><coden>ICDMEN</coden><abstract>Selective epitaxy of quantum dots using self-assembled segregation promises nanoscale resolution at conventional lithography prices.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/MCD.2003.1203175</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 8755-3996 |
| ispartof | IEEE circuits and devices magazine, 2003-05, Vol.19 (3), p.26-31 |
| issn | 8755-3996 1558-1888 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28780916 |
| source | IEEE/IET Electronic Library |
| subjects | Bonding Capacitive sensors Circuits Gallium arsenide Gallium nitride Lattices MOCVD Self-assembly Substrates Tensile strain |
| title | Nano on nano |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-14T13%3A30%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Nano%20on%20nano&rft.jtitle=IEEE%20circuits%20and%20devices%20magazine&rft.au=Yeoh,%20T.S.&rft.date=2003-05&rft.volume=19&rft.issue=3&rft.spage=26&rft.epage=31&rft.pages=26-31&rft.issn=8755-3996&rft.eissn=1558-1888&rft.coden=ICDMEN&rft_id=info:doi/10.1109/MCD.2003.1203175&rft_dat=%3Cproquest_RIE%3E2429931851%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=884359041&rft_id=info:pmid/&rft_ieee_id=1203175&rfr_iscdi=true |