Reliability of Power Gaas FET's-Au Gates and Al-Au Linked Gates

Reliability of Power Gaas FET's-Au Gates and Al-Au Linked Gates

An investigation of the reliability of two types of commercial microwave power GaAs FET's has been carried out. Mean-time-to-failure data for a device mounted face-up with Al gates but without an Al-Au couple is presented and similar data for a "flip-chip" mounted Au-refractory gate d...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1981-07, Vol.29 (7), p.636-642
Hauptverfasser: Cohen, E.D., Macpherson, A.C., Christou, A.
Format: Artikel
Sprache:eng
Schlagworte:
Failure analysis
Gallium arsenide
Gold
Laboratories
Packaging
Radio frequency
Substrates
Temperature
Testing
Voltage
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Beschreibung
Zusammenfassung:An investigation of the reliability of two types of commercial microwave power GaAs FET's has been carried out. Mean-time-to-failure data for a device mounted face-up with Al gates but without an Al-Au couple is presented and similar data for a "flip-chip" mounted Au-refractory gate device is reviewed. The failure mechanisms for both devices are described.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1981.1130422