Systematic study on photoresist removal using hydrogen atoms generated on heated catalyzer

Photoresist removal is one of the most important techniques in the fabrication of semiconductor devices. Here, H atoms generated on heated W catalyzer from H 2 gas molecules were used for photoresist removal instead of O 2-plasma ashing. Resist removal conditions such as catalyzer temperature, catal...

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Veröffentlicht in:	Thin solid films 2006-04, Vol.501 (1), p.326-328
Hauptverfasser:	Hashimoto, Kouhei, Masuda, Atsushi, Matsumura, Hideki, Ishibashi, Tomoatsu, Takao, Kazuhisa
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Catalyzer Electronics Exact sciences and technology Hydrogen Miscellaneous Photoresist removal Plasmaless process Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor-device characterization, design, and modeling
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Photoresist removal is one of the most important techniques in the fabrication of semiconductor devices. Here, H atoms generated on heated W catalyzer from H 2 gas molecules were used for photoresist removal instead of O 2-plasma ashing. Resist removal conditions such as catalyzer temperature, catalyzer structure, substrate temperature, H 2 pressure and H 2 flow rate were extensively studied. It was found that removal rate over 1 μm/min is achieved for positive-type i-line resist.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2005.07.287